| 2 | Author
| M. Rauh, H.-U Finzel, P. Wißmann | Requires cookie* | | Title
| The Oxidation Kinetics of Thin Copper Films Studied by Resistivity Measurements  | | | Abstract
| Resistivity measurements on thin metal films allow to study the kinetics of oxidation. The method is applied to 50 -60 nm thick copper films deposited on glass substrates under UHV conditions. After annealing at 150 °C, the films are exposed to pure oxygen at various temperatures in the range 85 -135 °C, and the electrical resistivity is recorded in situ. At these temperatures, the oxygen begins to penetrate into the interior of the films, which results in a relatively steep increase in the film resistivity. A linear time law is valid to good approximation, which can be attributed to the influence of the dissociation of an adsorbed molecular species of oxygen on the reaction velocity. A potential diffusion of oxygen in the grain boundaries is also discussed. | | |
Reference
| Z. Naturforsch. 54a, 117—123 (1999); received July 29 1998 | | |
Published
| 1999 | | |
Keywords
| Oxidation, Kinetics, Resistivity, Thin Metal Films | | |
Similar Items
| Find | | DEBUG INFO
| | | | TEI-XML for
| default:Reihe_A/54/ZNA-1999-54a-0117.pdf | | | Identifier
| ZNA-1999-54a-0117 | | | Volume
| 54 | |
|