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1990 (1)
1989 (1)
1Author    J. Parisi, J. Peinke, U. Rau, W. ClaußRequires cookie*
 Title    Nonequilibrium Phase Transitions of Impact Ionization Breakdown in Extrinsic Semiconductors  
 Abstract    In the study of semiconductor electronic breakdown we observe the self-generated formation of spatio-temporal dissipative structures, when a bias voltage is applied at liquid-helium temperature. The underlying nonlinear physics of impurity impact ionization reveals critical phase transition behavior by varying the temperature at constant voltage. 
  Reference    Z. Naturforsch. 45a, 1048—1050 (1990); received May 23 1990 
  Published    1990 
  Keywords    Semiconductor breakdown, Structure formation, Critical phase transition 
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 TEI-XML for    default:Reihe_A/45/ZNA-1990-45a-1048.pdf 
 Identifier    ZNA-1990-45a-1048 
 Volume    45 
2Author    J. Peinke, J. Parisi, U. Rau, W. Clauß, M. WeiseRequires cookie*
 Abstract    h a r a c te r is tic R e la x a tio n T im e s o f L o w -te m p e ra tu re S e m ic o n d u c to r B re a k d o w n K in e tic s The nonlinear transport behavior during low-temperature avalanche breakdown of extrinsic germanium is associated with the self-generated formation of spatio-temporal current structures. Very close to the critical phase transition between different conducting states, the underlying physical relaxation processes develop on relatively slow macroscopic time scales in the ms range. We have evaluated the slowing down of the characteristic time constants from independent measurements of the system response behavior to external pulsed excitations. 
  Reference    Z. Naturforsch. 44a, 629 (1989); received April 28 1989 
  Published    1989 
  Keywords    Semiconductor breakdown, Nonequilibrium phase transition, Structure formation, Nonlinear carrier transport, Relaxation processes 
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 TEI-XML for    default:Reihe_A/44/ZNA-1989-44a-0629.pdf 
 Identifier    ZNA-1989-44a-0629 
 Volume    44