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'Point defects' in keywords Facet   Publication Year 1994  [X]
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1Author    O. Wegener3, R. K. Üchler3, A. W. AtterichbRequires cookie*
 Abstract    12STe nuclear spin relaxation (NSR) and electrical conductivity measurements were performed on ultrapure single-crystalline paratellurite (a -T e0 2) between about 50 K and the melting point (1007 K) at various oxygen partial pressures (1 b a r -10"4 bar). At elevated temperatures the NSR rate l / 7 \ and conductivity a are caused by the diffusive motion o f point defects. From the observed p02-dependence of 1/Ti and a a defect model is developed which is shown to be consistent with the experimental data. The m odel involves ionic oxygen interstitials (O"), doubly charged oxygen vacancies (Vo') and charge-com pensating electron holes (h'). The observed pressure dependence suggests that the N SR rate is induced by the m otion of \ q while the conductivity is due to the m obility o f h*. Evaluation o f the data leads to 3.3 eV for the incorporation enthalpy o f oxygen on interstitial sites and to 4.5 eV for the formation enthalpy of oxygen Frenkel pairs (O "-V q'). Further, the chemical diffusion coefficient Dc is found to be caused by the ambipolar diffusion o f OS' and h \ At 950 K we obtained from both the NSR and conductivity experiments D c = (1 ± 0.3) • 10" 5 cm 2/s. 
  Reference    Z. Naturforsch. 49a, 1151 (1994); received August 22 1994 
  Published    1994 
  Keywords    Oxides, Point defects, Diffusion, N M R, Conductivity 
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 TEI-XML for    default:Reihe_A/49/ZNA-1994-49a-1151.pdf 
 Identifier    ZNA-1994-49a-1151 
 Volume    49