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1989 (1)
1Author    J. Peinke, J. Parisi, U. Rau, W. Clauß, M. WeiseRequires cookie*
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 Abstract    h a r a c te r is tic R e la x a tio n T im e s o f L o w -te m p e ra tu re S e m ic o n d u c to r B re a k d o w n K in e tic s The nonlinear transport behavior during low-temperature avalanche breakdown of extrinsic germanium is associated with the self-generated formation of spatio-temporal current structures. Very close to the critical phase transition between different conducting states, the underlying physical relaxation processes develop on relatively slow macroscopic time scales in the ms range. We have evaluated the slowing down of the characteristic time constants from independent measurements of the system response behavior to external pulsed excitations. 
  Reference    Z. Naturforsch. 44a, 629 (1989); received April 28 1989 
  Published    1989 
  Keywords    Semiconductor breakdown, Nonequilibrium phase transition, Structure formation, Nonlinear carrier transport, Relaxation processes 
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 TEI-XML for    default:Reihe_A/44/ZNA-1989-44a-0629.pdf 
 Identifier    ZNA-1989-44a-0629 
 Volume    44