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1988 (1)
1Author    M. '., Y., M. =. Zn, Cd, =. Al, Ga, In, X. =. Se, Te, Y. =. Cl, Klaus-Jürgen Range, Karin HandrickRequires cookie*
 Title    Synthese und Hochdruckverhalten quaternärer Chalkogenidhalogenide M 2 M X 3 Y (M = Zn, Cd; M = AI, Ga, In; X = Se, Te; Y = CI, Br, I) Synthesis and High-Pressure Behaviour of Quaternary Chalcogenide Halides M  
 Abstract    Quaternary chalcogenide halides M 2 M'X 3 Y (M = Zn, Cd; M' = Al, Ga. In; X = Se. Te; Y = Cl. Br, I) can be synthesized by heating stoichiometric amounts of the binary components MX. MY 2 , and M 2 X 3 in evacuated sealed quartz ampoules. In the case of aluminium and gallium compounds, a mixture of the M' and X elements rather than the binary compounds has been used. The products are typical tetrahedral compounds, crystallizing with either the defect wurtzite-type or the defect zinc-blende-type structure. At 25 kbar. and 1400 °C, Cd 2 InSe 3 Cl. Cd 2 InSe 3 Br, and Cd 2 InSe 3 I transform from the defect wurtzite-type structure to quenchable high-pressure phases with defect NaCl-type structure. The retransformation to the ambient-pressure phases proceeds via intermediates having the defect zinc-blende-type structure. Some aspects of the apparent non-stoichiometry in the high-pressure phases are discussed. 
  Reference    Z. Naturforsch. 43b, 153—158 (1988); eingegangen am 2. November 1987 
  Published    1988 
  Keywords    Quaternary Chalcogenide Halides, Synthesis, Crystal Structure High-Pressure Reactions 
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 TEI-XML for    default:Reihe_B/43/ZNB-1988-43b-0153.pdf 
 Identifier    ZNB-1988-43b-0153 
 Volume    43