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1990 (1)
1Author    J. Parisi, J. Peinke, U. Rau, W. ClaußRequires cookie*
 Title    Nonequilibrium Phase Transitions of Impact Ionization Breakdown in Extrinsic Semiconductors  
 Abstract    In the study of semiconductor electronic breakdown we observe the self-generated formation of spatio-temporal dissipative structures, when a bias voltage is applied at liquid-helium temperature. The underlying nonlinear physics of impurity impact ionization reveals critical phase transition behavior by varying the temperature at constant voltage. 
  Reference    Z. Naturforsch. 45a, 1048—1050 (1990); received May 23 1990 
  Published    1990 
  Keywords    Semiconductor breakdown, Structure formation, Critical phase transition 
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 TEI-XML for    default:Reihe_A/45/ZNA-1990-45a-1048.pdf 
 Identifier    ZNA-1990-45a-1048 
 Volume    45