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'Chalcopyrite Semiconductors' in keywords
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2000 (1)
1994 (1)
1Author    M. M. Ehlina, J. R. Im, M. Aschb, H. P. Fritz3Requires cookie*
 Title    Preparation of CuGaSe2 Thin Film Solar Cells Comprising an Electrochemical Gallium Deposition Step  
 Abstract    Thin film CuGaSe2 solar cells were prepared from the elements using electrochemical deposition of Ga from an alkaline bath. Sputtered copper layers with a small gallium content (Cuo.söGao.u) on Mo/soda-lime glass served as a substrate. Subsequent reactive annealing of the thus created Cu/Ga precursor layer with selenium vapour yielded CuGaSe2. Chalcopyrite phase formation was studied with XRD, micro-Raman spectroscopy, SEM-EDX and Auger electron spectroscopy. It was concluded from these measurements that the binary phases Cu2Se and Ga2Se3 are generated prior to the formation of the favoured CuGaSe2 phase. Complete solar cell structures were fabricated by chemical bath deposition of CdS and chemi­ cal vapour deposition of ZnO onto the CuGaSe2 absorber layer. Promising 3.2% efficiency with U oc = 542 mV, Isc = 12.0 mA/cm2 and FF = 0.49 were achieved, proving that electro­ chemical gallium deposition from an aqueous bath can contribute to the efficient thin film processing of chalcopyrite solar cells. 
  Reference    Z. Naturforsch. 49b, 1597—1605 (1994); received June 29 1994 
  Published    1994 
  Keywords    Chalcopyrite Semiconductors, Gallium Electrodeposition, XRD, Raman Spectra, Solar Cells 
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 TEI-XML for    default:Reihe_B/49/ZNB-1994-49b-1597.pdf 
 Identifier    ZNB-1994-49b-1597 
 Volume    49 
2Author    M. Dietrich, A. Burchard, D. Degering, M. Deicher, J. Kortus, R. Magerle, A. Möller, V. Samokhvalov, S. Unterricker, R. ViandenRequires cookie*
 Title    Quadrupole Interaction in Ternary Chalcopyrite Semiconductors: Experiments and Theory  
 Abstract    Electric field gradients have been measured at substitutional lattice sites in ternary semiconduc-tors using Perturbed 7-7 Angular Correlation spectroscopy (PAC). The experimental results for A I B III C 2 chalcopyrite structure compounds and • A 1I B2 C4 1 defect chalcopyrites are compared with ab-initio calculations. The latter were carried out with the WIEN code that uses the Full Poten-tial Linearized Augmented Plane Wave method within a density functional theory. The agreement between experiment and theory is in most cases very good. Furthermore, the anion displacements in AgGaX 2 -compounds (X: S, Se, Te) have been determined theoretically by determining the minimum of the total energy of the electrons in an elementary cell. 
  Reference    Z. Naturforsch. 55a, 256—260 (2000); received September 11 1999 
  Published    2000 
  Keywords    Quadrupole Interaction, Chalcopyrite Semiconductors, First Principles Calculations, Perturbed Angular Correlations, Structure Parameters 
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 TEI-XML for    default:Reihe_A/55/ZNA-2000-55a-0256.pdf 
 Identifier    ZNA-2000-55a-0256 
 Volume    55