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1996 (1)
1Author    C. Kerst, P. Potzinger, H. Gg, WagnerRequires cookie*
 Title    The Mercury-Sensitized Photolysis of Pentamethyldisilane  
 Abstract    Two primary processes were observed in the Hg-sensitized photolysis of Me 5 Si 2 H: (I) hydrogen abstraction from the Si-H bond with a quantum yield of 0(1) = 0.85, (V) Si-Si bond breaking with 0(V) = 0.04. The hydrogen atoms formed in (/) undergo an H atom abstraction reaction (k(3)), as well as substitution reactions at the Si centers resulting in the formation of dimethylsilane and trimethylsilyl radical (k(4)) or trimethylsilane and dimethylsilyl radical (k(5)). The following branching ratios have been determined: M = 0.87. M 0.096, M = 0.034. k(3) + k(4) + k(5) k(3) + k(4) + k(5) k(3) + k(4) + k(5) The ratio of disproportionation (A: (2)) to combination (£(1)) for the pentamethyldisilyl radical has been determined with MeOH as the scavenger for 1-methyl-l-trimethylsilylsilene, 0.046 < k(2)/ A: C1) < 0.071. A mechanism with pertinent rate constants has been proposed which accounts for the results. 
  Reference    Z. Naturforsch. 51a, 105—115 (1996); received October 28 1995 
  Published    1996 
  Keywords    Hg-sensitized photolysis, pentamethyldisilane, mechanism, substitution reaction, silyl rad-ical disproportionation 
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 TEI-XML for    default:Reihe_A/51/ZNA-1996-51a-0105.pdf 
 Identifier    ZNA-1996-51a-0105 
 Volume    51